Vishay Semiconductor Diodes Division - NS8GTHE3_A/P

KEY Part #: K6442309

NS8GTHE3_A/P Bei (USD) [3177pcs Hisa]

  • 1,000 pcs$0.26162

Nambari ya Sehemu:
NS8GTHE3_A/P
Mzalishaji:
Vishay Semiconductor Diodes Division
Maelezo ya kina:
DIODE GEN PURP 400V 8A TO220AC.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - RF, Thyristors - TRIAC, Transistors - IGBTs - Arrays, Transistors - FET, MOSFETs - RF, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - Bipolar (BJT) - RF, Viwango - Rectifiers - Moja and Transistors - Ushirikiano uliopangwa ...
Faida ya Ushindani:
We specialize in Vishay Semiconductor Diodes Division NS8GTHE3_A/P electronic components. NS8GTHE3_A/P can be shipped within 24 hours after order. If you have any demands for NS8GTHE3_A/P, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NS8GTHE3_A/P Sifa za Bidhaa

Nambari ya Sehemu : NS8GTHE3_A/P
Mzalishaji : Vishay Semiconductor Diodes Division
Maelezo : DIODE GEN PURP 400V 8A TO220AC
Mfululizo : Automotive, AEC-Q101
Hali ya Sehemu : Obsolete
Aina ya Diode : Standard
Voltage - DC Reverse (Vr) (Max) : 400V
Sasa - Wastani Aliyerekebishwa (Io) : 8A
Voltage - Mbele (Vf) (Max) @ Kama : 1.1V @ 8A
Kasi : Standard Recovery >500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) : -
Sasa - Rejea kuvuja @ Vr : 10µA @ 400V
Uwezo @ Vr, F : 55pF @ 4V, 1MHz
Aina ya Kuinua : Through Hole
Kifurushi / Kesi : TO-220-2
Kifurushi cha Kifaa cha Mtoaji : TO-220AC
Joto la Kufanya kazi - Junction : -55°C ~ 150°C

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