Nambari ya Sehemu :
RGT30NS65DGTL
Mzalishaji :
Rohm Semiconductor
Maelezo :
IGBT 650V 30A 133W TO-263S
Aina ya IGBT :
Trench Field Stop
Voltage - Kukusanya Emitter Kuvunja (Max) :
650V
Sasa - Mtoza (Ic) (Max) :
30A
Sasa - Mtoza Ushuru (Icm) :
45A
Vce (on) (Max) @ Vge, Ic :
2.1V @ 15V, 15A
Aina ya Kuingiza :
Standard
Td (on / off) @ 25 ° C :
18ns/64ns
Hali ya Uchunguzi :
400V, 15A, 10 Ohm, 15V
Rudisha Wakati wa Kuokoa (trr) :
55ns
Joto la Kufanya kazi :
-40°C ~ 175°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Kifurushi cha Kifaa cha Mtoaji :
LPDS (TO-263S)