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Ikiwa eneo lako halijaorodheshwa, tafadhali chagua moja ya yafuatayo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
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  5. AS4C512M16D3L-12BINTR

Alliance Memory, Inc. - AS4C512M16D3L-12BINTR

KEY Part #: K915505

AS4C512M16D3L-12BINTR Bei (USD) [5093pcs Hisa]

  • 1 pcs$9.62297
  • 1,000 pcs$9.57509
Nambari ya Sehemu:
AS4C512M16D3L-12BINTR
Mzalishaji:
Alliance Memory, Inc.
Maelezo ya kina:
IC DRAM 8G PARALLEL 96FBGA. DRAM 8GB 1.35V 800MHz 512M x 16 DDR3L IT
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: PMIC - Marejeo ya Voltage, Mantiki - Latches, PMIC - Usajili wa Voltage - DC DC Kubadilisha Regu, PMIC - AU Kidhibiti, Viwango Bora, PMIC - Madereva wa Laser, Mantiki - Vipimo, PMIC - Watawala wa Ugavi wa Nguvu, Wachunguzi and Maingiliano - Wasafirishaji, Watangazaji, Wabadili ...
Faida ya Ushindani:
We specialize in Alliance Memory, Inc. AS4C512M16D3L-12BINTR electronic components. AS4C512M16D3L-12BINTR can be shipped within 24 hours after order. If you have any demands for AS4C512M16D3L-12BINTR, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

AS4C512M16D3L-12BINTR Sifa za Bidhaa

Nambari ya Sehemu : AS4C512M16D3L-12BINTR
Mzalishaji : Alliance Memory, Inc.
Maelezo : IC DRAM 8G PARALLEL 96FBGA
Mfululizo : -
Hali ya Sehemu : Active
Aina ya kumbukumbu : Volatile
Fomati ya kumbukumbu : DRAM
Teknolojia : SDRAM - DDR3L
Saizi ya kumbukumbu : 8Gb (512M x 16)
Usafirishaji wa Saa : 800MHz
Andika Wakati wa Msaada - Neno, Ukurasa : 15ns
Wakati wa Upataji : 13.75ns
Maingiliano ya kumbukumbu : Parallel
Voltage - Ugavi : 1.283V ~ 1.45V
Joto la Kufanya kazi : -40°C ~ 95°C (TC)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 96-TFBGA
Kifurushi cha Kifaa cha Mtoaji : 96-FBGA (14x9)

Habari mpya kabisa

Alliance Memory Low-Power DDR2 SDRAM
Alliance Memory MT41x DDR3 SDRAMs
Alliance Memory Low Power CMOS SRAM
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