1N6483HE3/97 Bei (USD) [704650pcs Hisa]
- 1 pcs$0.05249
- 10,000 pcs$0.04757
- Nambari ya Sehemu:
- 1N6483HE3/97
- Mzalishaji:
- Vishay Semiconductor Diodes Division
- Maelezo ya kina:
- DIODE GEN PURP 800V 1A DO213AB. Rectifiers 800 Volt 1.0 Amp 30 Amp IFSM
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Zener - Arrays, Transistors - Bipolar (BJT) - RF, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Thyristors - SCR, Viwango - RF, Viwango - Zener - Moja, Transistors - FET, MOSFETs - Moja and Thyristors - TRIAC ...
- Faida ya Ushindani:
- We specialize in Vishay Semiconductor Diodes Division 1N6483HE3/97 electronic components. 1N6483HE3/97 can be shipped within 24 hours after order. If you have any demands for 1N6483HE3/97, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
1N6483HE3/97 Sifa za Bidhaa
Nambari ya Sehemu :
1N6483HE3/97
Mzalishaji :
Vishay Semiconductor Diodes Division
Maelezo :
DIODE GEN PURP 800V 1A DO213AB
Mfululizo :
SUPERECTIFIER®
Hali ya Sehemu :
Active
Aina ya Diode :
Standard
Voltage - DC Reverse (Vr) (Max) :
800V
Sasa - Wastani Aliyerekebishwa (Io) :
1A
Voltage - Mbele (Vf) (Max) @ Kama :
1.1V @ 1A
Kasi :
Standard Recovery >500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) :
-
Sasa - Rejea kuvuja @ Vr :
10µA @ 800V
Uwezo @ Vr, F :
8pF @ 4V, 1MHz
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
DO-213AB, MELF (Glass)
Kifurushi cha Kifaa cha Mtoaji :
DO-213AB
Joto la Kufanya kazi - Junction :
-65°C ~ 175°C
Habari mpya kabisa
Unaweza pia Kuvutiwa Na
-
GL41YHE3/97
Vishay Semiconductor Diodes Division
DIODE GEN PURP 1.6KV 1A DO213AB. Rectifiers 1 Amp 1600 Volt 30 Amp IFSM
-
RGL34G-E3/98
Vishay Semiconductor Diodes Division
DIODE GEN PURP 400V 500MA DO213. Diodes - General Purpose, Power, Switching 400 Volt 0.5A 150ns 10 Amp IFSM
-
BYM07-300-E3/83
Vishay Semiconductor Diodes Division
DIODE GEN PURP 300V 500MA DO213. Rectifiers 300 Volt 0.5A 50ns Glass Passivated
-
BYM07-50-E3/98
Vishay Semiconductor Diodes Division
DIODE GEN PURP 50V 500MA DO213AA. Rectifiers 50 Volt 0.5A 50ns Glass Passivated
-
EGL34C-E3/98
Vishay Semiconductor Diodes Division
DIODE GEN PURP 150V 500MA DO213. Rectifiers 0.5Amp 150 Volt 50ns
-
EGL34F-E3/98
Vishay Semiconductor Diodes Division
DIODE GEN PURP 300V 500MA DO213. Rectifiers 0.5Amp 300 Volt 50ns
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