IRFBE30SPBF Bei (USD) [26417pcs Hisa]
- 1 pcs$1.55126
- 10 pcs$1.38644
- 100 pcs$1.07857
- 500 pcs$0.87339
- 1,000 pcs$0.73659
- Nambari ya Sehemu:
- IRFBE30SPBF
- Mzalishaji:
- Vishay Siliconix
- Maelezo ya kina:
- MOSFET N-CH 800V 4.1A D2PAK.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Kusudi Maalum, Transistors - Bipolar (BJT) - Moja, Transistors - IGBTs - Moja, Viwango - Zener - Arrays, Transistors - IGBTs - Arrays, Thyristors - TRIAC, Thyristors - DIAC, SIDAC and Transistors - FET, MOSFETs - Moja ...
- Faida ya Ushindani:
- We specialize in Vishay Siliconix IRFBE30SPBF electronic components. IRFBE30SPBF can be shipped within 24 hours after order. If you have any demands for IRFBE30SPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFBE30SPBF Sifa za Bidhaa
Nambari ya Sehemu :
IRFBE30SPBF
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET N-CH 800V 4.1A D2PAK
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
800V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
4.1A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
3 Ohm @ 2.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
78nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
1300pF @ 25V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
125W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
D2PAK
Kifurushi / Kesi :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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