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Ikiwa eneo lako halijaorodheshwa, tafadhali chagua moja ya yafuatayo:

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  5. AS4C8M16MSA-6BIN

Alliance Memory, Inc. - AS4C8M16MSA-6BIN

KEY Part #: K939150

AS4C8M16MSA-6BIN Bei (USD) [23793pcs Hisa]

  • 1 pcs$1.92586
Nambari ya Sehemu:
AS4C8M16MSA-6BIN
Mzalishaji:
Alliance Memory, Inc.
Maelezo ya kina:
IC DRAM 128M PARALLEL 54FBGA. DRAM 128M 166MHz 8Mx16 Mobile LP SDRAM IT
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Maelewano - Utaratibu wa Dijiti wa moja kwa moja (, PMIC - Kamili, Madereva wa Nusu-Daraja, PMIC - RMS kwa vibadilishaji vya DC, Maingiliano - I / O Wapanuaji, PMIC - Uuzaji wa Nishati, Mantiki - Vipimo, Kumbukumbu and PMIC - Usajili wa Voltage - DC DC Kubadilisha Regu ...
Faida ya Ushindani:
We specialize in Alliance Memory, Inc. AS4C8M16MSA-6BIN electronic components. AS4C8M16MSA-6BIN can be shipped within 24 hours after order. If you have any demands for AS4C8M16MSA-6BIN, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

AS4C8M16MSA-6BIN Sifa za Bidhaa

Nambari ya Sehemu : AS4C8M16MSA-6BIN
Mzalishaji : Alliance Memory, Inc.
Maelezo : IC DRAM 128M PARALLEL 54FBGA
Mfululizo : -
Hali ya Sehemu : Active
Aina ya kumbukumbu : Volatile
Fomati ya kumbukumbu : DRAM
Teknolojia : SDRAM - Mobile
Saizi ya kumbukumbu : 128Mb (8M x 16)
Usafirishaji wa Saa : 166MHz
Andika Wakati wa Msaada - Neno, Ukurasa : -
Wakati wa Upataji : 5ns
Maingiliano ya kumbukumbu : Parallel
Voltage - Ugavi : 1.7V ~ 1.95V
Joto la Kufanya kazi : -40°C ~ 85°C (TA)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 54-VFBGA
Kifurushi cha Kifaa cha Mtoaji : 54-FBGA (8x8)

Habari mpya kabisa

Alliance Memory Low Power CMOS SRAM
Alliance Memory MT41x DDR3 SDRAMs
Alliance Memory Low-Power DDR2 SDRAM
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