Infineon Technologies - DF80R12W2H3FB11BPSA1

KEY Part #: K6534554

DF80R12W2H3FB11BPSA1 Bei (USD) [1273pcs Hisa]

  • 1 pcs$33.99664

Nambari ya Sehemu:
DF80R12W2H3FB11BPSA1
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
MOD DIODE BRIDGE EASY1B-2-1.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Thyristors - SCR, Transistors - FET, MOSFETs - RF, Transistors - Bipolar (BJT) - RF, Transistors - FET, MOSFETs - Arrays, Thyristors - TRIAC, Transistors - Kusudi Maalum and Thyristors - SCRs - Moduli ...
Faida ya Ushindani:
We specialize in Infineon Technologies DF80R12W2H3FB11BPSA1 electronic components. DF80R12W2H3FB11BPSA1 can be shipped within 24 hours after order. If you have any demands for DF80R12W2H3FB11BPSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DF80R12W2H3FB11BPSA1 Sifa za Bidhaa

Nambari ya Sehemu : DF80R12W2H3FB11BPSA1
Mzalishaji : Infineon Technologies
Maelezo : MOD DIODE BRIDGE EASY1B-2-1
Mfululizo : EconoPACK™2
Hali ya Sehemu : Active
Aina ya IGBT : Trench Field Stop
Usanidi : Half Bridge
Voltage - Kukusanya Emitter Kuvunja (Max) : 1200V
Sasa - Mtoza (Ic) (Max) : 20A
Nguvu - Max : 20mW
Vce (on) (Max) @ Vge, Ic : 1.7V @ 15V, 20A
Sasa - Ushuru Mtoaji : 1mA
Uingilivu Ufungaji (Wakuu) @ Vce : 2.35nF @ 25V
Uingizaji : Standard
Mtaalam wa NTC : Yes
Joto la Kufanya kazi : -40°C ~ 150°C (TJ)
Aina ya Kuinua : Chassis Mount
Kifurushi / Kesi : Module
Kifurushi cha Kifaa cha Mtoaji : Module