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  5. AS4C512M8D3LB-12BCNTR

Alliance Memory, Inc. - AS4C512M8D3LB-12BCNTR

KEY Part #: K936390

AS4C512M8D3LB-12BCNTR Bei (USD) [14134pcs Hisa]

  • 1 pcs$3.24174
Nambari ya Sehemu:
AS4C512M8D3LB-12BCNTR
Mzalishaji:
Alliance Memory, Inc.
Maelezo ya kina:
IC DRAM 4G PARALLEL 78FBGA. DRAM 4G 1.35V 800MHz 512M x 8 DDR3
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Maingiliano - UARTs (Transformer ya Universal Asyn, Maingiliano - Maalum, PMIC - Udhibiti / Usimamizi wa sasa, Linear - Watengenezaji, Saa / Majira ya saa - Bafa ya Clock, Madereva, Mantiki - Kumbukumbu za FIFO, Maingiliano - Rekodi ya Sauti na Uchezaji and Upataji wa Takwimu - Mwisho wa Analog Mbele (AFE) ...
Faida ya Ushindani:
We specialize in Alliance Memory, Inc. AS4C512M8D3LB-12BCNTR electronic components. AS4C512M8D3LB-12BCNTR can be shipped within 24 hours after order. If you have any demands for AS4C512M8D3LB-12BCNTR, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

AS4C512M8D3LB-12BCNTR Sifa za Bidhaa

Nambari ya Sehemu : AS4C512M8D3LB-12BCNTR
Mzalishaji : Alliance Memory, Inc.
Maelezo : IC DRAM 4G PARALLEL 78FBGA
Mfululizo : -
Hali ya Sehemu : Active
Aina ya kumbukumbu : Volatile
Fomati ya kumbukumbu : DRAM
Teknolojia : SDRAM - DDR3L
Saizi ya kumbukumbu : 4Gb (512M x 8)
Usafirishaji wa Saa : 800MHz
Andika Wakati wa Msaada - Neno, Ukurasa : 15ns
Wakati wa Upataji : 20ns
Maingiliano ya kumbukumbu : Parallel
Voltage - Ugavi : 1.283V ~ 1.45V
Joto la Kufanya kazi : 0°C ~ 95°C (TC)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 78-VFBGA
Kifurushi cha Kifaa cha Mtoaji : 78-FBGA (10.5x9)

Habari mpya kabisa

Alliance Memory Low Power CMOS SRAM
Alliance Memory Low-Power DDR2 SDRAM
Alliance Memory MT41x DDR3 SDRAMs
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