Nambari ya Sehemu :
SCT2280KEC
Mzalishaji :
Rohm Semiconductor
Maelezo :
MOSFET N-CH 1200V 14A TO-247
Teknolojia :
SiCFET (Silicon Carbide)
Kukata kwa Voltage Voltage (Vdss) :
1200V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
14A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
18V
Njia ya Kutumia (Max) @ Id, Vgs :
364 mOhm @ 4A, 18V
Vgs (th) (Max) @ Id :
4V @ 1.4mA
Malango ya Lango (Qg) (Max) @ Vgs :
36nC @ 18V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
667pF @ 800V
Kuondoa Nguvu (Max) :
108W (Tc)
Joto la Kufanya kazi :
175°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
TO-247
Kifurushi / Kesi :
TO-247-3