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Ikiwa eneo lako halijaorodheshwa, tafadhali chagua moja ya yafuatayo:

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  1. Nyumbani
  2. Bidhaa
  3. Duru Jumuishi (ICs)
  4. Kumbukumbu
  5. IS43DR86400C-3DBL-TR

ISSI, Integrated Silicon Solution Inc - IS43DR86400C-3DBL-TR

KEY Part #: K940016

IS43DR86400C-3DBL-TR Bei (USD) [27837pcs Hisa]

  • 1 pcs$1.96948
  • 2,000 pcs$1.95968
Nambari ya Sehemu:
IS43DR86400C-3DBL-TR
Mzalishaji:
ISSI, Integrated Silicon Solution Inc
Maelezo ya kina:
IC DRAM 512M PARALLEL 60TWBGA. DRAM 512M, 1.8V, 333Mhz 64Mx8 DDR2
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: PMIC - Watawala wa Nguvu Zaidi ya Ethernet (PoE), PMIC - Wasimamizi, Maingiliano - Watawala, Kumbukumbu - Batri, Logic - Gates na Inverters, Mantiki - mantiki maalum, Mantiki - Vipimo and Maingiliano - Sensor na Njia za Detector ...
Faida ya Ushindani:
We specialize in ISSI, Integrated Silicon Solution Inc IS43DR86400C-3DBL-TR electronic components. IS43DR86400C-3DBL-TR can be shipped within 24 hours after order. If you have any demands for IS43DR86400C-3DBL-TR, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IS43DR86400C-3DBL-TR Sifa za Bidhaa

Nambari ya Sehemu : IS43DR86400C-3DBL-TR
Mzalishaji : ISSI, Integrated Silicon Solution Inc
Maelezo : IC DRAM 512M PARALLEL 60TWBGA
Mfululizo : -
Hali ya Sehemu : Active
Aina ya kumbukumbu : Volatile
Fomati ya kumbukumbu : DRAM
Teknolojia : SDRAM - DDR2
Saizi ya kumbukumbu : 512Mb (64M x 8)
Usafirishaji wa Saa : 333MHz
Andika Wakati wa Msaada - Neno, Ukurasa : 15ns
Wakati wa Upataji : 450ps
Maingiliano ya kumbukumbu : Parallel
Voltage - Ugavi : 1.7V ~ 1.9V
Joto la Kufanya kazi : 0°C ~ 70°C (TA)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 60-TFBGA
Kifurushi cha Kifaa cha Mtoaji : 60-TWBGA (8x10.5)

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