Infineon Technologies - IKB03N120H2ATMA1

KEY Part #: K6424906

IKB03N120H2ATMA1 Bei (USD) [73899pcs Hisa]

  • 1 pcs$0.52911
  • 1,000 pcs$0.47315

Nambari ya Sehemu:
IKB03N120H2ATMA1
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
IGBT 1200V 9.6A 62.5W TO220-3.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - FET, MOSFETs - Moja, Transistors - IGBTs - Moja, Viwango - Rectifiers - Moja, Thyristors - SCRs - Moduli, Thyristors - TRIAC, Viwango - Bridge Rectifiers, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl and Transistors - Ushirikiano uliopangwa ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IKB03N120H2ATMA1 Sifa za Bidhaa

Nambari ya Sehemu : IKB03N120H2ATMA1
Mzalishaji : Infineon Technologies
Maelezo : IGBT 1200V 9.6A 62.5W TO220-3
Mfululizo : -
Hali ya Sehemu : Not For New Designs
Aina ya IGBT : -
Voltage - Kukusanya Emitter Kuvunja (Max) : 1200V
Sasa - Mtoza (Ic) (Max) : 9.6A
Sasa - Mtoza Ushuru (Icm) : 9.9A
Vce (on) (Max) @ Vge, Ic : 2.8V @ 15V, 3A
Nguvu - Max : 62.5W
Kubadilisha Nishati : 290µJ
Aina ya Kuingiza : Standard
Malango ya Lango : 22nC
Td (on / off) @ 25 ° C : 9.2ns/281ns
Hali ya Uchunguzi : 800V, 3A, 82 Ohm, 15V
Rudisha Wakati wa Kuokoa (trr) : 42ns
Joto la Kufanya kazi : -40°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Kifurushi cha Kifaa cha Mtoaji : PG-TO263-3-2