NSVBC114EDXV6T1G Bei (USD) [817851pcs Hisa]
- 1 pcs$0.04523
- 8,000 pcs$0.04248
- Nambari ya Sehemu:
- NSVBC114EDXV6T1G
- Mzalishaji:
- ON Semiconductor
- Maelezo ya kina:
- TRANS 2NPN BIAS BIPOLAR SOT563.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - IGBTs - Moja, Viwango - Bridge Rectifiers, Viwango - Zener - Arrays, Thyristors - TRIAC, Transistors - FET, MOSFETs - Arrays and Transistors - IGBTs - Moduli ...
- Faida ya Ushindani:
- We specialize in ON Semiconductor NSVBC114EDXV6T1G electronic components. NSVBC114EDXV6T1G can be shipped within 24 hours after order. If you have any demands for NSVBC114EDXV6T1G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NSVBC114EDXV6T1G Sifa za Bidhaa
Nambari ya Sehemu :
NSVBC114EDXV6T1G
Mzalishaji :
ON Semiconductor
Maelezo :
TRANS 2NPN BIAS BIPOLAR SOT563
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya Transistor :
2 NPN - Pre-Biased (Dual)
Sasa - Mtoza (Ic) (Max) :
100mA
Voltage - Kukusanya Emitter Kuvunja (Max) :
50V
Upinzani - Msingi (R1) :
10 kOhms
Upinzani - Base ya Emitter (R2) :
10 kOhms
DC Sasa Gain (hFE) (Min) @ Ic, Vce :
35 @ 5mA, 10V
Vce Saturdayation (Max) @ Ib, Ic :
250mV @ 300µA, 10mA
Sasa - Ushuru Mtoaji :
500nA
Mara kwa mara - Mpito :
-
Nguvu - Max :
500mW
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
SOT-563, SOT-666
Kifurushi cha Kifaa cha Mtoaji :
SOT-563
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