UGB8JT-E3/81 Bei (USD) [97852pcs Hisa]
- 1 pcs$0.39959
- 800 pcs$0.37427
- 1,600 pcs$0.27950
- 2,400 pcs$0.26087
- 5,600 pcs$0.24845
- Nambari ya Sehemu:
- UGB8JT-E3/81
- Mzalishaji:
- Vishay Semiconductor Diodes Division
- Maelezo ya kina:
- DIODE GEN PURP 600V 8A TO263AB. Rectifiers 600 Volt 8.0A 25ns 100 Amp IFSM
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - DIAC, SIDAC, Transistors - Bipolar (BJT) - RF, Thyristors - SCR, Viwango - RF, Transistors - Bipolar (BJT) - Moja, Transistors - Bipolar (BJT) - Kufika, Viwango - Zener - Moja and Viwango - Rectifiers - Arrays ...
- Faida ya Ushindani:
- We specialize in Vishay Semiconductor Diodes Division UGB8JT-E3/81 electronic components. UGB8JT-E3/81 can be shipped within 24 hours after order. If you have any demands for UGB8JT-E3/81, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
UGB8JT-E3/81 Sifa za Bidhaa
Nambari ya Sehemu :
UGB8JT-E3/81
Mzalishaji :
Vishay Semiconductor Diodes Division
Maelezo :
DIODE GEN PURP 600V 8A TO263AB
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya Diode :
Standard
Voltage - DC Reverse (Vr) (Max) :
600V
Sasa - Wastani Aliyerekebishwa (Io) :
8A
Voltage - Mbele (Vf) (Max) @ Kama :
1.75V @ 8A
Kasi :
Fast Recovery =< 500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) :
50ns
Sasa - Rejea kuvuja @ Vr :
30µA @ 600V
Uwezo @ Vr, F :
-
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Kifurushi cha Kifaa cha Mtoaji :
TO-263AB
Joto la Kufanya kazi - Junction :
-55°C ~ 150°C
Habari mpya kabisa
Unaweza pia Kuvutiwa Na
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Vishay Semiconductor Diodes Division
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