Nambari ya Sehemu :
GSID200A170S3B1
Mzalishaji :
Global Power Technologies Group
Maelezo :
SILICON IGBT MODULES
Voltage - Kukusanya Emitter Kuvunja (Max) :
1200V
Sasa - Mtoza (Ic) (Max) :
400A
Vce (on) (Max) @ Vge, Ic :
1.9V @ 15V, 200A
Sasa - Ushuru Mtoaji :
1mA
Uingilivu Ufungaji (Wakuu) @ Vce :
26nF @ 25V
Joto la Kufanya kazi :
-40°C ~ 150°C
Aina ya Kuinua :
Chassis Mount
Kifurushi / Kesi :
D-3 Module
Kifurushi cha Kifaa cha Mtoaji :
D3