Global Power Technologies Group - GSID200A170S3B1

KEY Part #: K6532559

GSID200A170S3B1 Bei (USD) [660pcs Hisa]

  • 1 pcs$70.68933
  • 4 pcs$70.33764

Nambari ya Sehemu:
GSID200A170S3B1
Mzalishaji:
Global Power Technologies Group
Maelezo ya kina:
SILICON IGBT MODULES.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - FET, MOSFETs - Arrays, Thyristors - SCR, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - IGBTs - Moduli, Thyristors - DIAC, SIDAC, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - FET, MOSFETs - RF and Viwango - RF ...
Faida ya Ushindani:
We specialize in Global Power Technologies Group GSID200A170S3B1 electronic components. GSID200A170S3B1 can be shipped within 24 hours after order. If you have any demands for GSID200A170S3B1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

GSID200A170S3B1 Sifa za Bidhaa

Nambari ya Sehemu : GSID200A170S3B1
Mzalishaji : Global Power Technologies Group
Maelezo : SILICON IGBT MODULES
Mfululizo : Amp+™
Hali ya Sehemu : Active
Aina ya IGBT : -
Usanidi : 2 Independent
Voltage - Kukusanya Emitter Kuvunja (Max) : 1200V
Sasa - Mtoza (Ic) (Max) : 400A
Nguvu - Max : 1630W
Vce (on) (Max) @ Vge, Ic : 1.9V @ 15V, 200A
Sasa - Ushuru Mtoaji : 1mA
Uingilivu Ufungaji (Wakuu) @ Vce : 26nF @ 25V
Uingizaji : Standard
Mtaalam wa NTC : No
Joto la Kufanya kazi : -40°C ~ 150°C
Aina ya Kuinua : Chassis Mount
Kifurushi / Kesi : D-3 Module
Kifurushi cha Kifaa cha Mtoaji : D3

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