Infineon Technologies - F3L200R07PE4BOSA1

KEY Part #: K6532701

F3L200R07PE4BOSA1 Bei (USD) [637pcs Hisa]

  • 1 pcs$72.89284

Nambari ya Sehemu:
F3L200R07PE4BOSA1
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
IGBT MODULE VCES 650V 200A.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - JFETs, Transistors - Bipolar (BJT) - RF, Thyristors - TRIAC, Viwango - RF, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Moja, Viwango - uwezo wa Kubadilika (Varicaps, Varactors and Viwango - Bridge Rectifiers ...
Faida ya Ushindani:
We specialize in Infineon Technologies F3L200R07PE4BOSA1 electronic components. F3L200R07PE4BOSA1 can be shipped within 24 hours after order. If you have any demands for F3L200R07PE4BOSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

F3L200R07PE4BOSA1 Sifa za Bidhaa

Nambari ya Sehemu : F3L200R07PE4BOSA1
Mzalishaji : Infineon Technologies
Maelezo : IGBT MODULE VCES 650V 200A
Mfululizo : -
Hali ya Sehemu : Active
Aina ya IGBT : Trench Field Stop
Usanidi : Three Phase Inverter
Voltage - Kukusanya Emitter Kuvunja (Max) : 650V
Sasa - Mtoza (Ic) (Max) : 200A
Nguvu - Max : 680W
Vce (on) (Max) @ Vge, Ic : 1.95V @ 15V, 200A
Sasa - Ushuru Mtoaji : 1mA
Uingilivu Ufungaji (Wakuu) @ Vce : 12.5nF @ 25V
Uingizaji : Standard
Mtaalam wa NTC : Yes
Joto la Kufanya kazi : -40°C ~ 150°C
Aina ya Kuinua : Chassis Mount
Kifurushi / Kesi : Module
Kifurushi cha Kifaa cha Mtoaji : Module

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