Nambari ya Sehemu :
RS1KLHM2G
Mzalishaji :
Taiwan Semiconductor Corporation
Maelezo :
DIODE GEN PURP 800V 800MA SUBSMA
Mfululizo :
Automotive, AEC-Q101
Voltage - DC Reverse (Vr) (Max) :
800V
Sasa - Wastani Aliyerekebishwa (Io) :
800mA
Voltage - Mbele (Vf) (Max) @ Kama :
1.3V @ 800mA
Kasi :
Fast Recovery =< 500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) :
500ns
Sasa - Rejea kuvuja @ Vr :
5µA @ 800V
Uwezo @ Vr, F :
10pF @ 4V, 1MHz
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
DO-219AB
Kifurushi cha Kifaa cha Mtoaji :
Sub SMA
Joto la Kufanya kazi - Junction :
-55°C ~ 150°C