ON Semiconductor - FDB8870

KEY Part #: K6399219

FDB8870 Bei (USD) [95627pcs Hisa]

  • 1 pcs$0.41094
  • 800 pcs$0.40889

Nambari ya Sehemu:
FDB8870
Mzalishaji:
ON Semiconductor
Maelezo ya kina:
MOSFET N-CH 30V 23A TO-263AB.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Moduli za Dereva za Nguvu, Viwango - Zener - Arrays, Viwango - RF, Transistors - IGBTs - Moja, Transistors - FET, MOSFETs - Moja, Transistors - FET, MOSFETs - Arrays, Viwango - Rectifiers - Moja and Thyristors - TRIAC ...
Faida ya Ushindani:
We specialize in ON Semiconductor FDB8870 electronic components. FDB8870 can be shipped within 24 hours after order. If you have any demands for FDB8870, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDB8870 Sifa za Bidhaa

Nambari ya Sehemu : FDB8870
Mzalishaji : ON Semiconductor
Maelezo : MOSFET N-CH 30V 23A TO-263AB
Mfululizo : PowerTrench®
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 23A (Ta), 160A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 3.9 mOhm @ 35A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 132nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 5200pF @ 15V
Makala ya FET : -
Kuondoa Nguvu (Max) : 160W (Tc)
Joto la Kufanya kazi : -55°C ~ 175°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : TO-263AB
Kifurushi / Kesi : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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