Diodes Incorporated - DDTC114ELP-7

KEY Part #: K6527213

DDTC114ELP-7 Bei (USD) [663036pcs Hisa]

  • 1 pcs$0.05579
  • 3,000 pcs$0.05025
  • 6,000 pcs$0.04720
  • 15,000 pcs$0.04416
  • 30,000 pcs$0.04050

Nambari ya Sehemu:
DDTC114ELP-7
Mzalishaji:
Diodes Incorporated
Maelezo ya kina:
TRANS PREBIAS NPN 250MW 3DFN.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Transistors - FET, MOSFETs - RF, Moduli za Dereva za Nguvu, Transistors - Ushirikiano uliopangwa, Transistors - FET, MOSFETs - Arrays, Transistors - IGBTs - Arrays, Thyristors - SCRs - Moduli and Transistors - JFETs ...
Faida ya Ushindani:
We specialize in Diodes Incorporated DDTC114ELP-7 electronic components. DDTC114ELP-7 can be shipped within 24 hours after order. If you have any demands for DDTC114ELP-7, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DDTC114ELP-7 Sifa za Bidhaa

Nambari ya Sehemu : DDTC114ELP-7
Mzalishaji : Diodes Incorporated
Maelezo : TRANS PREBIAS NPN 250MW 3DFN
Mfululizo : -
Hali ya Sehemu : Active
Aina ya Transistor : NPN - Pre-Biased
Sasa - Mtoza (Ic) (Max) : 100mA
Voltage - Kukusanya Emitter Kuvunja (Max) : 50V
Upinzani - Msingi (R1) : 10 kOhms
Upinzani - Base ya Emitter (R2) : 10 kOhms
DC Sasa Gain (hFE) (Min) @ Ic, Vce : 100 @ 50mA, 5V
Vce Saturdayation (Max) @ Ib, Ic : 300mV @ 10mA, 70mA
Sasa - Ushuru Mtoaji : 1µA
Mara kwa mara - Mpito : 250MHz
Nguvu - Max : 250mW
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 3-UFDFN
Kifurushi cha Kifaa cha Mtoaji : 3-DFN1006 (1.0x0.6)

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