Infineon Technologies - IPB65R045C7ATMA1

KEY Part #: K6403081

IPB65R045C7ATMA1 Bei (USD) [2482pcs Hisa]

  • 1,000 pcs$3.51888

Nambari ya Sehemu:
IPB65R045C7ATMA1
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
MOSFET N-CH 650V 46A TO-263-3.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Thyristors - SCR, Transistors - Bipolar (BJT) - Moja, Thyristors - SCRs - Moduli, Viwango - Rectifiers - Moja, Transistors - JFETs, Transistors - Ushirikiano uliopangwa and Viwango - Rectifiers - Arrays ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPB65R045C7ATMA1 Sifa za Bidhaa

Nambari ya Sehemu : IPB65R045C7ATMA1
Mzalishaji : Infineon Technologies
Maelezo : MOSFET N-CH 650V 46A TO-263-3
Mfululizo : CoolMOS™ C7
Hali ya Sehemu : Discontinued at Digi-Key
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 650V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 46A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 45 mOhm @ 24.9A, 10V
Vgs (th) (Max) @ Id : 4V @ 1.25mA
Malango ya Lango (Qg) (Max) @ Vgs : 93nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 4340pF @ 400V
Makala ya FET : -
Kuondoa Nguvu (Max) : 227W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : D²PAK (TO-263AB)
Kifurushi / Kesi : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB