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Ikiwa eneo lako halijaorodheshwa, tafadhali chagua moja ya yafuatayo:

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  1. Nyumbani
  2. Bidhaa
  3. Bidhaa za Semiconductor za Disc
  4. Transistors - JFETs
  5. 2SK3666-2-TB-E

ON Semiconductor - 2SK3666-2-TB-E

KEY Part #: K6521208

2SK3666-2-TB-E Bei (USD) [1080797pcs Hisa]

  • 1 pcs$0.03821
  • 3,000 pcs$0.03802
Nambari ya Sehemu:
2SK3666-2-TB-E
Mzalishaji:
ON Semiconductor
Maelezo ya kina:
JFET NCH 30V 200MW 3CP.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - IGBTs - Arrays, Viwango - Rectifiers - Arrays, Transistors - Kusudi Maalum, Transistors - Ushirikiano uliopangwa, Transistors - IGBTs - Moja, Thyristors - TRIAC and Transistors - Bipolar (BJT) - RF ...
Faida ya Ushindani:
We specialize in ON Semiconductor 2SK3666-2-TB-E electronic components. 2SK3666-2-TB-E can be shipped within 24 hours after order. If you have any demands for 2SK3666-2-TB-E, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

2SK3666-2-TB-E Sifa za Bidhaa

Nambari ya Sehemu : 2SK3666-2-TB-E
Mzalishaji : ON Semiconductor
Maelezo : JFET NCH 30V 200MW 3CP
Mfululizo : -
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Voltage - Kuvunja (V (BR) GSS) : -
Kukata kwa Voltage Voltage (Vdss) : 30V
Hivi sasa - Drain (Idss) @ Vds (Vgs = 0) : 600µA @ 10V
Drain ya Sasa (Id) - Max : 10mA
Voltage - Cutoff (VGS off) @ Id : 180mV @ 1µA
Uingizwaji uwezo (Ciss) (Max) @ Vds : 4pF @ 10V
Upinzani - RDS (Imewashwa) : 200 Ohms
Nguvu - Max : 200mW
Joto la Kufanya kazi : 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : TO-236-3, SC-59, SOT-23-3
Kifurushi cha Kifaa cha Mtoaji : 3-CP

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