Nambari ya Sehemu :
IPD80R450P7ATMA1
Mzalishaji :
Infineon Technologies
Maelezo :
MOSFET N-CH 800V 11A DPAK
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
800V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
11A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
450 mOhm @ 4.5A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 220µA
Malango ya Lango (Qg) (Max) @ Vgs :
24nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
770pF @ 500V
Makala ya FET :
Super Junction
Kuondoa Nguvu (Max) :
73W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
TO-252
Kifurushi / Kesi :
TO-252-3, DPak (2 Leads + Tab), SC-63