ON Semiconductor - FDB86102LZ

KEY Part #: K6397349

FDB86102LZ Bei (USD) [111339pcs Hisa]

  • 1 pcs$0.33220
  • 800 pcs$0.23110

Nambari ya Sehemu:
FDB86102LZ
Mzalishaji:
ON Semiconductor
Maelezo ya kina:
MOSFET N-CH 100V 30A D2PAK.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - SCR, Transistors - FET, MOSFETs - Arrays, Viwango - Zener - Arrays, Transistors - Ushirikiano uliopangwa, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Viwango - uwezo wa Kubadilika (Varicaps, Varactors and Viwango - RF ...
Faida ya Ushindani:
We specialize in ON Semiconductor FDB86102LZ electronic components. FDB86102LZ can be shipped within 24 hours after order. If you have any demands for FDB86102LZ, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDB86102LZ Sifa za Bidhaa

Nambari ya Sehemu : FDB86102LZ
Mzalishaji : ON Semiconductor
Maelezo : MOSFET N-CH 100V 30A D2PAK
Mfululizo : PowerTrench®
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 100V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 8.3A (Ta), 30A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 24 mOhm @ 8.3A, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 21nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 1275pF @ 50V
Makala ya FET : -
Kuondoa Nguvu (Max) : 3.1W (Ta)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : TO-263AB
Kifurushi / Kesi : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB