Diodes Incorporated - ZXMN2F34MATA

KEY Part #: K6408398

[641pcs Hisa]


    Nambari ya Sehemu:
    ZXMN2F34MATA
    Mzalishaji:
    Diodes Incorporated
    Maelezo ya kina:
    MOSFET N-CH 20V 4A DFN-2X2.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - RF, Viwango - Bridge Rectifiers, Viwango - Zener - Arrays, Thyristors - SCR, Transistors - FET, MOSFETs - Arrays, Transistors - FET, MOSFETs - RF, Moduli za Dereva za Nguvu and Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl ...
    Faida ya Ushindani:
    We specialize in Diodes Incorporated ZXMN2F34MATA electronic components. ZXMN2F34MATA can be shipped within 24 hours after order. If you have any demands for ZXMN2F34MATA, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    ZXMN2F34MATA Sifa za Bidhaa

    Nambari ya Sehemu : ZXMN2F34MATA
    Mzalishaji : Diodes Incorporated
    Maelezo : MOSFET N-CH 20V 4A DFN-2X2
    Mfululizo : -
    Hali ya Sehemu : Obsolete
    Aina ya FET : N-Channel
    Teknolojia : MOSFET (Metal Oxide)
    Kukata kwa Voltage Voltage (Vdss) : 20V
    Sasa - Dawa inayoendelea (Id) @ 25 ° C : 4A (Ta)
    Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 2.5V, 4.5V
    Njia ya Kutumia (Max) @ Id, Vgs : 60 mOhm @ 2.5A, 4.5V
    Vgs (th) (Max) @ Id : 1.5V @ 250µA
    Malango ya Lango (Qg) (Max) @ Vgs : 2.8nC @ 4.5V
    Vgs (Max) : ±12V
    Uingizwaji uwezo (Ciss) (Max) @ Vds : 277pF @ 10V
    Makala ya FET : -
    Kuondoa Nguvu (Max) : 1.35W (Ta)
    Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
    Aina ya Kuinua : Surface Mount
    Kifurushi cha Kifaa cha Mtoaji : DFN322
    Kifurushi / Kesi : 3-VDFN