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Ikiwa eneo lako halijaorodheshwa, tafadhali chagua moja ya yafuatayo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Nyumbani
  2. Bidhaa
  3. Bidhaa za Semiconductor za Disc
  4. Transistors - Bipolar (BJT) - Moja
  5. 2SD1012F-SPA

ON Semiconductor - 2SD1012F-SPA

KEY Part #: K6383140

[9410pcs Hisa]

    Nambari ya Sehemu:
    2SD1012F-SPA
    Mzalishaji:
    ON Semiconductor
    Maelezo ya kina:
    TRANS NPN 15V 0.7A SPA.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Moja, Transistors - Ushirikiano uliopangwa, Viwango - Rectifiers - Moja, Viwango - Zener - Moja, Transistors - FET, MOSFETs - Arrays, Moduli za Dereva za Nguvu, Viwango - uwezo wa Kubadilika (Varicaps, Varactors and Transistors - Bipolar (BJT) - Moja ...
    Faida ya Ushindani:
    We specialize in ON Semiconductor 2SD1012F-SPA electronic components. 2SD1012F-SPA can be shipped within 24 hours after order. If you have any demands for 2SD1012F-SPA, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    2SD1012F-SPA Sifa za Bidhaa

    Nambari ya Sehemu : 2SD1012F-SPA
    Mzalishaji : ON Semiconductor
    Maelezo : TRANS NPN 15V 0.7A SPA
    Mfululizo : -
    Hali ya Sehemu : Obsolete
    Aina ya Transistor : NPN
    Sasa - Mtoza (Ic) (Max) : 700mA
    Voltage - Kukusanya Emitter Kuvunja (Max) : 15V
    Vce Saturdayation (Max) @ Ib, Ic : 80mV @ 10mA, 100mA
    Sasa - Ushuru Mtoaji : 1µA (ICBO)
    DC Sasa Gain (hFE) (Min) @ Ic, Vce : 160 @ 50mA, 2V
    Nguvu - Max : 250mW
    Mara kwa mara - Mpito : 250MHz
    Joto la Kufanya kazi : 125°C (TJ)
    Aina ya Kuinua : Through Hole
    Kifurushi / Kesi : 3-SIP
    Kifurushi cha Kifaa cha Mtoaji : 3-SPA

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