IXYS - IXTP08N100P

KEY Part #: K6394734

IXTP08N100P Bei (USD) [59377pcs Hisa]

  • 1 pcs$0.76105
  • 50 pcs$0.75726

Nambari ya Sehemu:
IXTP08N100P
Mzalishaji:
IXYS
Maelezo ya kina:
MOSFET N-CH 1000V 800MA TO-220.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Moja, Transistors - IGBTs - Moduli, Transistors - Bipolar (BJT) - Kufika, Viwango - Bridge Rectifiers, Transistors - FET, MOSFETs - RF, Thyristors - TRIAC and Transistors - Ushirikiano uliopangwa ...
Faida ya Ushindani:
We specialize in IXYS IXTP08N100P electronic components. IXTP08N100P can be shipped within 24 hours after order. If you have any demands for IXTP08N100P, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXTP08N100P Sifa za Bidhaa

Nambari ya Sehemu : IXTP08N100P
Mzalishaji : IXYS
Maelezo : MOSFET N-CH 1000V 800MA TO-220
Mfululizo : Polar™
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 1000V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 800mA (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 20 Ohm @ 500mA, 10V
Vgs (th) (Max) @ Id : 4V @ 50µA
Malango ya Lango (Qg) (Max) @ Vgs : 11.3nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 240pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 42W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Through Hole
Kifurushi cha Kifaa cha Mtoaji : TO-220AB
Kifurushi / Kesi : TO-220-3