Nambari ya Sehemu :
TK8R2A06PL,S4X
Mzalishaji :
Toshiba Semiconductor and Storage
Maelezo :
X35 PB-F POWER MOSFET TRANSISTOR
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
60V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
50A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
11.4 mOhm @ 8A, 4.5V
Vgs (th) (Max) @ Id :
2.5V @ 300µA
Malango ya Lango (Qg) (Max) @ Vgs :
28.4nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
1990pF @ 25V
Kuondoa Nguvu (Max) :
36W (Tc)
Joto la Kufanya kazi :
175°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
TO-220SIS
Kifurushi / Kesi :
TO-220-3 Full Pack