Nambari ya Sehemu :
DLN10C-BT
Mzalishaji :
ON Semiconductor
Maelezo :
DIODE GEN PURP 200V 1A AXIAL
Hali ya Sehemu :
Obsolete
Voltage - DC Reverse (Vr) (Max) :
200V
Sasa - Wastani Aliyerekebishwa (Io) :
1A
Voltage - Mbele (Vf) (Max) @ Kama :
980mV @ 1A
Kasi :
Fast Recovery =< 500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) :
35ns
Sasa - Rejea kuvuja @ Vr :
10µA @ 200V
Aina ya Kuinua :
Through Hole
Kifurushi / Kesi :
R-1 (Axial)
Kifurushi cha Kifaa cha Mtoaji :
-
Joto la Kufanya kazi - Junction :
150°C (Max)