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Ikiwa eneo lako halijaorodheshwa, tafadhali chagua moja ya yafuatayo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
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  5. AS4C512M8D3LA-12BIN

Alliance Memory, Inc. - AS4C512M8D3LA-12BIN

KEY Part #: K917611

AS4C512M8D3LA-12BIN Bei (USD) [13896pcs Hisa]

  • 1 pcs$4.56565
  • 10 pcs$4.22940
  • 25 pcs$4.13341
  • 50 pcs$4.11067
  • 100 pcs$3.61894
  • 250 pcs$3.43988
  • 500 pcs$3.40457
  • 1,000 pcs$3.29109
Nambari ya Sehemu:
AS4C512M8D3LA-12BIN
Mzalishaji:
Alliance Memory, Inc.
Maelezo ya kina:
IC DRAM 4G PARALLEL 78FBGA.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Maingiliano - Buffers za Signal, Wanaorudia, Spide, PMIC - Mabadiliko ya Usambazaji wa Nguvu, Madereva, PMIC - Marejeo ya Voltage, Upataji wa Takwimu - Dijiti kwa Analog za Analog (, Upataji wa data - ADC / DACs - Kusudi Maalum, Kumbukumbu - Batri, Maingiliano - vituo vya Ishara and Maingiliano - Watawala ...
Faida ya Ushindani:
We specialize in Alliance Memory, Inc. AS4C512M8D3LA-12BIN electronic components. AS4C512M8D3LA-12BIN can be shipped within 24 hours after order. If you have any demands for AS4C512M8D3LA-12BIN, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

AS4C512M8D3LA-12BIN Sifa za Bidhaa

Nambari ya Sehemu : AS4C512M8D3LA-12BIN
Mzalishaji : Alliance Memory, Inc.
Maelezo : IC DRAM 4G PARALLEL 78FBGA
Mfululizo : -
Hali ya Sehemu : Obsolete
Aina ya kumbukumbu : Volatile
Fomati ya kumbukumbu : DRAM
Teknolojia : SDRAM - DDR3L
Saizi ya kumbukumbu : 4Gb (512M x 8)
Usafirishaji wa Saa : 800MHz
Andika Wakati wa Msaada - Neno, Ukurasa : 15ns
Wakati wa Upataji : 20ns
Maingiliano ya kumbukumbu : Parallel
Voltage - Ugavi : 1.283V ~ 1.45V
Joto la Kufanya kazi : -40°C ~ 95°C (TC)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 78-VFBGA
Kifurushi cha Kifaa cha Mtoaji : 78-FBGA (9x10.5)

Habari mpya kabisa

Alliance Memory Low-Power DDR2 SDRAM
Alliance Memory MT41x DDR3 SDRAMs
Alliance Memory Low Power CMOS SRAM
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