Nambari ya Sehemu :
1N5550US
Mzalishaji :
Microsemi Corporation
Maelezo :
DIODE GEN PURP 200V 3A D5B
Voltage - DC Reverse (Vr) (Max) :
200V
Sasa - Wastani Aliyerekebishwa (Io) :
3A
Voltage - Mbele (Vf) (Max) @ Kama :
1.2V @ 9A
Kasi :
Standard Recovery >500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) :
2µs
Sasa - Rejea kuvuja @ Vr :
1µA @ 200V
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
SQ-MELF, B
Kifurushi cha Kifaa cha Mtoaji :
D-5B
Joto la Kufanya kazi - Junction :
-65°C ~ 175°C