BYM10-1000HE3/97 Bei (USD) [675586pcs Hisa]
- 1 pcs$0.05475
- 10,000 pcs$0.04962
- Nambari ya Sehemu:
- BYM10-1000HE3/97
- Mzalishaji:
- Vishay Semiconductor Diodes Division
- Maelezo ya kina:
- DIODE GEN PURP 1KV 1A DO213AB. Rectifiers 1000 Volt 1.0 Amp Glass Passivated
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - IGBTs - Moduli, Transistors - Bipolar (BJT) - Kufika, Thyristors - TRIAC, Transistors - Ushirikiano uliopangwa, Viwango - Zener - Arrays and Viwango - Bridge Rectifiers ...
- Faida ya Ushindani:
- We specialize in Vishay Semiconductor Diodes Division BYM10-1000HE3/97 electronic components. BYM10-1000HE3/97 can be shipped within 24 hours after order. If you have any demands for BYM10-1000HE3/97, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BYM10-1000HE3/97 Sifa za Bidhaa
Nambari ya Sehemu :
BYM10-1000HE3/97
Mzalishaji :
Vishay Semiconductor Diodes Division
Maelezo :
DIODE GEN PURP 1KV 1A DO213AB
Mfululizo :
SUPERECTIFIER®
Hali ya Sehemu :
Active
Aina ya Diode :
Standard
Voltage - DC Reverse (Vr) (Max) :
1000V
Sasa - Wastani Aliyerekebishwa (Io) :
1A
Voltage - Mbele (Vf) (Max) @ Kama :
1.2V @ 1A
Kasi :
Standard Recovery >500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) :
-
Sasa - Rejea kuvuja @ Vr :
10µA @ 1000V
Uwezo @ Vr, F :
8pF @ 4V, 1MHz
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
DO-213AB, MELF (Glass)
Kifurushi cha Kifaa cha Mtoaji :
DO-213AB
Joto la Kufanya kazi - Junction :
-65°C ~ 175°C
Habari mpya kabisa
Unaweza pia Kuvutiwa Na
-
GL41YHE3/97
Vishay Semiconductor Diodes Division
DIODE GEN PURP 1.6KV 1A DO213AB. Rectifiers 1 Amp 1600 Volt 30 Amp IFSM
-
RGL34GHE3/98
Vishay Semiconductor Diodes Division
DIODE GEN PURP 400V 500MA DO213. Diodes - General Purpose, Power, Switching 400 Volt 0.5A 150ns 10 Amp IFSM
-
RGL34DHE3/98
Vishay Semiconductor Diodes Division
DIODE GEN PURP 200V 500MA DO213. Diodes - General Purpose, Power, Switching 200 Volt 0.5A 150ns 10 Amp IFSM
-
RGL34BHE3/83
Vishay Semiconductor Diodes Division
DIODE GEN PURP 100V 500MA DO213. Diodes - General Purpose, Power, Switching 100 Volt 0.5A 150ns 10 Amp IFSM
-
RGL34AHE3/98
Vishay Semiconductor Diodes Division
DIODE GEN PURP 50V 500MA DO213AA. Diodes - General Purpose, Power, Switching 50 Volt 0.5A 150ns 10 Amp IFSM
-
RGL34JHE3/98
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 500MA DO213. Diodes - General Purpose, Power, Switching 600 Volt 0.5A 250ns 10 Amp IFSM
Sehemu za Moto
- CN646 BK
- IRD3CH53DB6
- VS-20MQ100NPBF
- 1N4002GPEHE3/91
- RS1PBHM3/85A
- VS-30WQ03FNPBF
- SK36/TR13
- CD214A-B130LLF
- VS-50WQ06FNPBF
- CDBA320L-G
- VS-80EPF12PBF
- 1N4551A
- C2D05120E
- RB520S-30FTE61
- MBRB735-E3/45
- VS-20ETF04STRRPBF
- 1N1616A
- APT15D30KG
- SDP06S60
- RGP20JHE3/73
- R6100625XXYZ
- R6100230XXYZ
- UG1002-T
- STTH5R06G
- MURA240T3
- VS-31DQ05TR
- NUR460/L02,112
- MUR1510H
- CTLSH1-50M832DS BK
- SF34-TP
- RL251M-TP
- R5000-TP
- FR1007-AP
- STPS30170DJF-TR
- ESH3C-E3/9AT
- RB053L-30TE25
- RU 1CV
- ES3B-E3/9AT
- IMBD4148-HE3-08
- LS4154GS18