IDW30E65D1FKSA1 Bei (USD) [33046pcs Hisa]
- 1 pcs$0.76930
- 10 pcs$0.68945
- 100 pcs$0.55432
- 500 pcs$0.45543
- 1,000 pcs$0.37735
- Nambari ya Sehemu:
- IDW30E65D1FKSA1
- Mzalishaji:
- Infineon Technologies
- Maelezo ya kina:
- DIODE GEN PURP 650V 60A TO247-3. Diodes - General Purpose, Power, Switching IGBT PRODUCTS
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Moja, Transistors - IGBTs - Moja, Transistors - IGBTs - Arrays, Transistors - Kusudi Maalum, Transistors - Bipolar (BJT) - RF, Thyristors - SCRs - Moduli, Moduli za Dereva za Nguvu and Viwango - RF ...
- Faida ya Ushindani:
- We specialize in Infineon Technologies IDW30E65D1FKSA1 electronic components. IDW30E65D1FKSA1 can be shipped within 24 hours after order. If you have any demands for IDW30E65D1FKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IDW30E65D1FKSA1 Sifa za Bidhaa
Nambari ya Sehemu :
IDW30E65D1FKSA1
Mzalishaji :
Infineon Technologies
Maelezo :
DIODE GEN PURP 650V 60A TO247-3
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya Diode :
Standard
Voltage - DC Reverse (Vr) (Max) :
650V
Sasa - Wastani Aliyerekebishwa (Io) :
60A
Voltage - Mbele (Vf) (Max) @ Kama :
1.7V @ 30A
Kasi :
Fast Recovery =< 500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) :
115ns
Sasa - Rejea kuvuja @ Vr :
40µA @ 650V
Uwezo @ Vr, F :
-
Aina ya Kuinua :
Through Hole
Kifurushi / Kesi :
TO-247-3
Kifurushi cha Kifaa cha Mtoaji :
TO-247-3
Joto la Kufanya kazi - Junction :
-40°C ~ 175°C
Habari mpya kabisa
Unaweza pia Kuvutiwa Na
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SE10FD-M3/I
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DIODE GEN PURP 200V 1A DO219AB. Rectifiers 1A 200V ESD Prot SMF Rectifier
-
SE10FDHM3/H
Vishay Semiconductor Diodes Division
DIODE GEN PURP 200V 1A DO219AB. Rectifiers 1A 200V ESD Prot SMF Rectifier
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