SIZ320DT-T1-GE3 Bei (USD) [245327pcs Hisa]
- 1 pcs$0.15077
- Nambari ya Sehemu:
- SIZ320DT-T1-GE3
- Mzalishaji:
- Vishay Siliconix
- Maelezo ya kina:
- MOSFET 2N-CH 25V 30/40A 8POWER33.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Moja, Viwango - RF, Transistors - FET, MOSFETs - Arrays, Transistors - IGBTs - Moja, Thyristors - TRIAC, Moduli za Dereva za Nguvu, Transistors - FET, MOSFETs - Moja and Transistors - Ushirikiano uliopangwa ...
- Faida ya Ushindani:
- We specialize in Vishay Siliconix SIZ320DT-T1-GE3 electronic components. SIZ320DT-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIZ320DT-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIZ320DT-T1-GE3 Sifa za Bidhaa
Nambari ya Sehemu :
SIZ320DT-T1-GE3
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET 2N-CH 25V 30/40A 8POWER33
Mfululizo :
PowerPAIR®, TrenchFET®
Hali ya Sehemu :
Active
Aina ya FET :
2 N-Channel (Dual)
Makala ya FET :
Standard
Kukata kwa Voltage Voltage (Vdss) :
25V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
30A (Tc), 40A (Tc)
Njia ya Kutumia (Max) @ Id, Vgs :
8.3 mOhm @ 8A, 10V, 4.24 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
2.4V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
8.9nC @ 4.5V, 11.9nC @ 4.5V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
660pF @ 12.5V, 1370pF @ 12.5V
Nguvu - Max :
16.7W, 31W
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
8-PowerWDFN
Kifurushi cha Kifaa cha Mtoaji :
8-Power33 (3x3)
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