Nambari ya Sehemu :
CS8312YN8
Mzalishaji :
ON Semiconductor
Maelezo :
IC PREDRIVER IGBT IGNITION 8DIP
Hali ya Sehemu :
Obsolete
Usanidi ulioendeshwa :
Low-Side
Aina ya Lango :
IGBT, N-Channel MOSFET
Voltage - Ugavi :
7V ~ 10V
Logic Voltage - VIL, VIH :
-
Pato la Sasa (Pato, Mchanganyiko) :
-
Aina ya Kuingiza :
Non-Inverting
High Side Voltage - Max (Bootstrap) :
-
Wakati wa kupanda / Kuanguka (Aina) :
-
Joto la Kufanya kazi :
-40°C ~ 150°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi / Kesi :
8-DIP (0.300", 7.62mm)
Kifurushi cha Kifaa cha Mtoaji :
8-PDIP