[8642pcs Hisa]
- Nambari ya Sehemu:
- BSF083N03LQ G
- Mzalishaji:
- Infineon Technologies
- Maelezo ya kina:
- MOSFET N-CH 30V 53A MG-WDSON-2.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - FET, MOSFETs - Moja, Transistors - Bipolar (BJT) - Moja, Thyristors - TRIAC, Viwango - Zener - Arrays, Transistors - FET, MOSFETs - RF, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - FET, MOSFETs - Arrays and Transistors - Bipolar (BJT) - RF ...
- Faida ya Ushindani:
- We specialize in Infineon Technologies BSF083N03LQ G electronic components. BSF083N03LQ G can be shipped within 24 hours after order. If you have any demands for BSF083N03LQ G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSF083N03LQ G Sifa za Bidhaa
Nambari ya Sehemu :
BSF083N03LQ G
Mzalishaji :
Infineon Technologies
Maelezo :
MOSFET N-CH 30V 53A MG-WDSON-2
Mfululizo :
OptiMOS™
Hali ya Sehemu :
Obsolete
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
13A (Ta), 53A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
8.3 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
18nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
1800pF @ 15V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
2.2W (Ta), 36W (Tc)
Joto la Kufanya kazi :
-40°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
MG-WDSON-2, CanPAK M™
Kifurushi / Kesi :
3-WDSON
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