Diodes Incorporated - 2DB1132P-13

KEY Part #: K6388373

2DB1132P-13 Bei (USD) [580156pcs Hisa]

  • 1 pcs$0.06375
  • 2,500 pcs$0.05743
  • 5,000 pcs$0.05395
  • 12,500 pcs$0.05047
  • 25,000 pcs$0.04629

Nambari ya Sehemu:
2DB1132P-13
Mzalishaji:
Diodes Incorporated
Maelezo ya kina:
TRANS PNP 32V 1A SOT89-3.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Arrays, Thyristors - SCR, Thyristors - TRIAC, Transistors - Bipolar (BJT) - Kufika, Transistors - FET, MOSFETs - RF, Viwango - Bridge Rectifiers, Transistors - Ushirikiano uliopangwa and Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl ...
Faida ya Ushindani:
We specialize in Diodes Incorporated 2DB1132P-13 electronic components. 2DB1132P-13 can be shipped within 24 hours after order. If you have any demands for 2DB1132P-13, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

2DB1132P-13 Sifa za Bidhaa

Nambari ya Sehemu : 2DB1132P-13
Mzalishaji : Diodes Incorporated
Maelezo : TRANS PNP 32V 1A SOT89-3
Mfululizo : -
Hali ya Sehemu : Active
Aina ya Transistor : PNP
Sasa - Mtoza (Ic) (Max) : 1A
Voltage - Kukusanya Emitter Kuvunja (Max) : 32V
Vce Saturdayation (Max) @ Ib, Ic : 500mV @ 50mA, 500mA
Sasa - Ushuru Mtoaji : 500nA (ICBO)
DC Sasa Gain (hFE) (Min) @ Ic, Vce : 82 @ 100mA, 3V
Nguvu - Max : 1W
Mara kwa mara - Mpito : 190MHz
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : TO-243AA
Kifurushi cha Kifaa cha Mtoaji : SOT-89-3

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