Vishay Semiconductor Diodes Division - UG10DCT-5410HE3/45

KEY Part #: K6475409

[6110pcs Hisa]


    Nambari ya Sehemu:
    UG10DCT-5410HE3/45
    Mzalishaji:
    Vishay Semiconductor Diodes Division
    Maelezo ya kina:
    DIODE ARRAY GP T0220AB.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - FET, MOSFETs - Moja, Transistors - IGBTs - Arrays, Viwango - Zener - Arrays, Viwango - Rectifiers - Arrays, Viwango - RF, Transistors - Ushirikiano uliopangwa, Transistors - FET, MOSFETs - Arrays and Transistors - Bipolar (BJT) - RF ...
    Faida ya Ushindani:
    We specialize in Vishay Semiconductor Diodes Division UG10DCT-5410HE3/45 electronic components. UG10DCT-5410HE3/45 can be shipped within 24 hours after order. If you have any demands for UG10DCT-5410HE3/45, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    UG10DCT-5410HE3/45 Sifa za Bidhaa

    Nambari ya Sehemu : UG10DCT-5410HE3/45
    Mzalishaji : Vishay Semiconductor Diodes Division
    Maelezo : DIODE ARRAY GP T0220AB
    Mfululizo : Automotive, AEC-Q101
    Hali ya Sehemu : Obsolete
    Usanidi wa Diode : 1 Pair Common Cathode
    Aina ya Diode : Standard
    Voltage - DC Reverse (Vr) (Max) : 200V
    Sasa - Wastani Aliyesafishwa (Io) (kwa Diode) : 5A
    Voltage - Mbele (Vf) (Max) @ Kama : 1.1V @ 5A
    Kasi : Fast Recovery =< 500ns, > 200mA (Io)
    Rudisha Wakati wa Kuokoa (trr) : 25ns
    Sasa - Rejea kuvuja @ Vr : 10µA @ 200V
    Joto la Kufanya kazi - Junction : -40°C ~ 150°C
    Aina ya Kuinua : Through Hole
    Kifurushi / Kesi : TO-220-3
    Kifurushi cha Kifaa cha Mtoaji : TO-220AB

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