Alliance Memory, Inc. - AS4C8M32SA-6BINTR

KEY Part #: K937838

AS4C8M32SA-6BINTR Bei (USD) [18285pcs Hisa]

  • 1 pcs$2.50606
  • 2,000 pcs$2.44567

Nambari ya Sehemu:
AS4C8M32SA-6BINTR
Mzalishaji:
Alliance Memory, Inc.
Maelezo ya kina:
IC DRAM 256M PARALLEL 90TFBGA. DRAM 256Mb, 3.3V, 143Mhz 8M x 32 SDRAM
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Chips za IC, Maingiliano - Buffers za Signal, Wanaorudia, Spide, Mantiki - Buffa, Madereva, Wapokeaji, Waendeshaji , Iliyoingizwa - DSP (Wasindikaji wa Ishara ya Dijit, Saa / Saa - Clocks halisi za saa, Maingiliano - Maalum, PMIC - Viwango vya kudhibiti - Dereva wa DC DC Kub and PMIC - PFC (Marekebisho ya Nguvu ya Nguvu) ...
Faida ya Ushindani:
We specialize in Alliance Memory, Inc. AS4C8M32SA-6BINTR electronic components. AS4C8M32SA-6BINTR can be shipped within 24 hours after order. If you have any demands for AS4C8M32SA-6BINTR, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

AS4C8M32SA-6BINTR Sifa za Bidhaa

Nambari ya Sehemu : AS4C8M32SA-6BINTR
Mzalishaji : Alliance Memory, Inc.
Maelezo : IC DRAM 256M PARALLEL 90TFBGA
Mfululizo : -
Hali ya Sehemu : Active
Aina ya kumbukumbu : Volatile
Fomati ya kumbukumbu : DRAM
Teknolojia : SDRAM
Saizi ya kumbukumbu : 256Mb (8M x 32)
Usafirishaji wa Saa : 166MHz
Andika Wakati wa Msaada - Neno, Ukurasa : 2ns
Wakati wa Upataji : 5ns
Maingiliano ya kumbukumbu : Parallel
Voltage - Ugavi : 3V ~ 3.6V
Joto la Kufanya kazi : -40°C ~ 85°C (TA)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 90-TFBGA
Kifurushi cha Kifaa cha Mtoaji : 90-TFBGA (8x13)

Unaweza pia Kuvutiwa Na
  • W9825G2JB-75

    Winbond Electronics

    IC DRAM 256M PARALLEL 90TFBGA. DRAM 256M SDR SDRAM x32, 133MHz,

  • W9825G2JB-6

    Winbond Electronics

    IC DRAM 256M PARALLEL 90TFBGA. DRAM 256M SDR SDRAM x32, 166MHz,

  • IS66WVC4M16EALL-7010BLI

    ISSI, Integrated Silicon Solution Inc

    IC PSRAM 64M PARALLEL 54VFBGA.

  • W97AH2KBVX2I

    Winbond Electronics

    IC DRAM 1G PARALLEL 134VFBGA. DRAM 1Gb LPDDR2, x32, 400MHz, -40 85C

  • W97AH6KBVX2I

    Winbond Electronics

    IC DRAM 1G PARALLEL 134VFBGA. DRAM 1Gb LPDDR2, x16, 400MHz, -40 85C

  • MT29F2G08ABAEAH4-AATX:E TR

    Micron Technology Inc.

    IC FLASH 2G PARALLEL 63VFBGA. NAND Flash SLC 2G 256MX8 FBGA