NXP USA Inc. - A2I08H040GNR1

KEY Part #: K6465927

A2I08H040GNR1 Bei (USD) [2585pcs Hisa]

  • 1 pcs$16.75182
  • 500 pcs$13.63665

Nambari ya Sehemu:
A2I08H040GNR1
Mzalishaji:
NXP USA Inc.
Maelezo ya kina:
IC RF LDMOS AMP.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Arrays, Viwango - Bridge Rectifiers, Transistors - Bipolar (BJT) - RF, Transistors - Kusudi Maalum, Transistors - FET, MOSFETs - Moja, Viwango - Zener - Moja, Viwango - Rectifiers - Arrays and Viwango - uwezo wa Kubadilika (Varicaps, Varactors ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

A2I08H040GNR1 Sifa za Bidhaa

Nambari ya Sehemu : A2I08H040GNR1
Mzalishaji : NXP USA Inc.
Maelezo : IC RF LDMOS AMP
Mfululizo : -
Hali ya Sehemu : Active
Aina ya Transistor : LDMOS (Dual)
Mara kwa mara : 920MHz
Pata : 30.7dB
Voltage - Mtihani : 28V
Ukadiriaji wa sasa : -
Kielelezo cha Kelele : -
Sasa - Mtihani : 25mA
Nguvu - Pato : 9W
Voltage - Imekadiriwa : 65V
Kifurushi / Kesi : TO-270-15 Variant, Gull Wing
Kifurushi cha Kifaa cha Mtoaji : TO-270WBG-15