Nambari ya Sehemu :
IPG20N06S2L65AATMA1
Mzalishaji :
Infineon Technologies
Maelezo :
MOSFET 2N-CH 8TDSON
Mfululizo :
Automotive, AEC-Q101, OptiMOS™
Aina ya FET :
2 N-Channel (Dual)
Makala ya FET :
Logic Level Gate
Kukata kwa Voltage Voltage (Vdss) :
55V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
20A
Njia ya Kutumia (Max) @ Id, Vgs :
65 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id :
2V @ 14µA
Malango ya Lango (Qg) (Max) @ Vgs :
12nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
410pF @ 25V
Joto la Kufanya kazi :
-55°C ~ 175°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
8-PowerVDFN
Kifurushi cha Kifaa cha Mtoaji :
PG-TDSON-8-10