Toshiba Semiconductor and Storage - HN1B04F(TE85L,F)

KEY Part #: K6392105

[6289pcs Hisa]


    Nambari ya Sehemu:
    HN1B04F(TE85L,F)
    Mzalishaji:
    Toshiba Semiconductor and Storage
    Maelezo ya kina:
    TRANS NPN/PNP 30V 0.5A SM6.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - FET, MOSFETs - RF, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - FET, MOSFETs - Moja, Transistors - JFETs, Thyristors - TRIAC, Transistors - Kusudi Maalum, Viwango - Rectifiers - Arrays and Transistors - FET, MOSFETs - Arrays ...
    Faida ya Ushindani:
    We specialize in Toshiba Semiconductor and Storage HN1B04F(TE85L,F) electronic components. HN1B04F(TE85L,F) can be shipped within 24 hours after order. If you have any demands for HN1B04F(TE85L,F), Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    HN1B04F(TE85L,F) Sifa za Bidhaa

    Nambari ya Sehemu : HN1B04F(TE85L,F)
    Mzalishaji : Toshiba Semiconductor and Storage
    Maelezo : TRANS NPN/PNP 30V 0.5A SM6
    Mfululizo : -
    Hali ya Sehemu : Obsolete
    Aina ya Transistor : NPN, PNP
    Sasa - Mtoza (Ic) (Max) : 500mA
    Voltage - Kukusanya Emitter Kuvunja (Max) : 30V
    Vce Saturdayation (Max) @ Ib, Ic : 250mV @ 10mA, 100mA
    Sasa - Ushuru Mtoaji : 100nA (ICBO)
    DC Sasa Gain (hFE) (Min) @ Ic, Vce : 70 @ 100mA, 1V
    Nguvu - Max : 300mW
    Mara kwa mara - Mpito : 200MHz
    Joto la Kufanya kazi : 150°C (TJ)
    Aina ya Kuinua : Surface Mount
    Kifurushi / Kesi : SC-74, SOT-457
    Kifurushi cha Kifaa cha Mtoaji : SM6

    Unaweza pia Kuvutiwa Na
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      TRANS NPN/PNP 50V 0.15A SM6.