IPD80R1K0CEATMA1 Bei (USD) [122915pcs Hisa]
- 1 pcs$0.30092
- 2,500 pcs$0.24576
- Nambari ya Sehemu:
- IPD80R1K0CEATMA1
- Mzalishaji:
- Infineon Technologies
- Maelezo ya kina:
- MOSFET N-CH 800V 5.7A TO252-3.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Arrays, Viwango - Rectifiers - Moja, Moduli za Dereva za Nguvu, Transistors - JFETs, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Viwango - Zener - Arrays, Transistors - IGBTs - Moja and Transistors - Bipolar (BJT) - Kufika ...
- Faida ya Ushindani:
- We specialize in Infineon Technologies IPD80R1K0CEATMA1 electronic components. IPD80R1K0CEATMA1 can be shipped within 24 hours after order. If you have any demands for IPD80R1K0CEATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPD80R1K0CEATMA1 Sifa za Bidhaa
Nambari ya Sehemu :
IPD80R1K0CEATMA1
Mzalishaji :
Infineon Technologies
Maelezo :
MOSFET N-CH 800V 5.7A TO252-3
Mfululizo :
CoolMOS™ CE
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
800V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
5.7A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
950 mOhm @ 3.6A, 10V
Vgs (th) (Max) @ Id :
3.9V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
31nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
785pF @ 100V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
83W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
PG-TO252-3
Kifurushi / Kesi :
TO-252-3, DPak (2 Leads + Tab), SC-63
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