Toshiba Semiconductor and Storage - RN2103MFV,L3F

KEY Part #: K6527806

[2709pcs Hisa]


    Nambari ya Sehemu:
    RN2103MFV,L3F
    Mzalishaji:
    Toshiba Semiconductor and Storage
    Maelezo ya kina:
    X34 PB-F VESM TRANSISTOR PD 150M.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Kufika, Transistors - Kusudi Maalum, Transistors - Bipolar (BJT) - Moja, Viwango - Zener - Arrays, Transistors - Ushirikiano uliopangwa, Thyristors - DIAC, SIDAC and Transistors - FET, MOSFETs - RF ...
    Faida ya Ushindani:
    We specialize in Toshiba Semiconductor and Storage RN2103MFV,L3F electronic components. RN2103MFV,L3F can be shipped within 24 hours after order. If you have any demands for RN2103MFV,L3F, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    RN2103MFV,L3F Sifa za Bidhaa

    Nambari ya Sehemu : RN2103MFV,L3F
    Mzalishaji : Toshiba Semiconductor and Storage
    Maelezo : X34 PB-F VESM TRANSISTOR PD 150M
    Mfululizo : -
    Hali ya Sehemu : Active
    Aina ya Transistor : PNP - Pre-Biased
    Sasa - Mtoza (Ic) (Max) : 100mA
    Voltage - Kukusanya Emitter Kuvunja (Max) : 50V
    Upinzani - Msingi (R1) : 22 kOhms
    Upinzani - Base ya Emitter (R2) : 22 kOhms
    DC Sasa Gain (hFE) (Min) @ Ic, Vce : 70 @ 10mA, 5V
    Vce Saturdayation (Max) @ Ib, Ic : 300mV @ 500µA, 5mA
    Sasa - Ushuru Mtoaji : 100nA (ICBO)
    Mara kwa mara - Mpito : -
    Nguvu - Max : 150mW
    Aina ya Kuinua : Surface Mount
    Kifurushi / Kesi : SOT-723
    Kifurushi cha Kifaa cha Mtoaji : VESM