Vishay Siliconix - SIA425EDJ-T1-GE3

KEY Part #: K6416310

SIA425EDJ-T1-GE3 Bei (USD) [12109pcs Hisa]

  • 3,000 pcs$0.07418

Nambari ya Sehemu:
SIA425EDJ-T1-GE3
Mzalishaji:
Vishay Siliconix
Maelezo ya kina:
MOSFET P-CH 20V 4.5A SC-70-6.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Viwango - Bridge Rectifiers, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - IGBTs - Moja, Transistors - FET, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - FET, MOSFETs - RF and Transistors - Bipolar (BJT) - RF ...
Faida ya Ushindani:
We specialize in Vishay Siliconix SIA425EDJ-T1-GE3 electronic components. SIA425EDJ-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIA425EDJ-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIA425EDJ-T1-GE3 Sifa za Bidhaa

Nambari ya Sehemu : SIA425EDJ-T1-GE3
Mzalishaji : Vishay Siliconix
Maelezo : MOSFET P-CH 20V 4.5A SC-70-6
Mfululizo : TrenchFET®
Hali ya Sehemu : Obsolete
Aina ya FET : P-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 20V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 4.5A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 1.8V, 4.5V
Njia ya Kutumia (Max) @ Id, Vgs : 60 mOhm @ 4.2A, 4.5V
Vgs (th) (Max) @ Id : 1V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : -
Vgs (Max) : ±12V
Uingizwaji uwezo (Ciss) (Max) @ Vds : -
Makala ya FET : -
Kuondoa Nguvu (Max) : 2.9W (Ta), 15.6W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : PowerPAK® SC-70-6 Single
Kifurushi / Kesi : PowerPAK® SC-70-6