STMicroelectronics - STB7NK80ZT4

KEY Part #: K6407507

STB7NK80ZT4 Bei (USD) [59685pcs Hisa]

  • 1 pcs$0.65511
  • 1,000 pcs$0.53216

Nambari ya Sehemu:
STB7NK80ZT4
Mzalishaji:
STMicroelectronics
Maelezo ya kina:
MOSFET N-CH 800V 5.2A D2PAK.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - IGBTs - Arrays, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Thyristors - TRIAC, Viwango - RF, Transistors - Bipolar (BJT) - RF and Viwango - Bridge Rectifiers ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

STB7NK80ZT4 Sifa za Bidhaa

Nambari ya Sehemu : STB7NK80ZT4
Mzalishaji : STMicroelectronics
Maelezo : MOSFET N-CH 800V 5.2A D2PAK
Mfululizo : SuperMESH™
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 800V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 5.2A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 1.8 Ohm @ 2.6A, 10V
Vgs (th) (Max) @ Id : 4.5V @ 100µA
Malango ya Lango (Qg) (Max) @ Vgs : 56nC @ 10V
Vgs (Max) : ±30V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 1138pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 125W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : D2PAK
Kifurushi / Kesi : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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