Nambari ya Sehemu :
HIP2101EIBT
Mzalishaji :
Renesas Electronics America Inc.
Maelezo :
IC DRVR HALF BRDG 100V 8EP-SOIC
Hali ya Sehemu :
Obsolete
Usanidi ulioendeshwa :
Half-Bridge
Aina ya Channel :
Independent
Aina ya Lango :
N-Channel MOSFET
Voltage - Ugavi :
9V ~ 14V
Logic Voltage - VIL, VIH :
0.8V, 2.2V
Pato la Sasa (Pato, Mchanganyiko) :
2A, 2A
Aina ya Kuingiza :
Non-Inverting
High Side Voltage - Max (Bootstrap) :
114V
Wakati wa kupanda / Kuanguka (Aina) :
10ns, 10ns
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
8-SOIC (0.154", 3.90mm Width) Exposed Pad
Kifurushi cha Kifaa cha Mtoaji :
8-SOIC-EP