Nambari ya Sehemu :
GB01SLT12-252
Mzalishaji :
GeneSiC Semiconductor
Maelezo :
DIODE SILICON 1.2KV 1A TO252
Aina ya Diode :
Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) :
1200V
Sasa - Wastani Aliyerekebishwa (Io) :
1A
Voltage - Mbele (Vf) (Max) @ Kama :
1.8V @ 1A
Kasi :
No Recovery Time > 500mA (Io)
Rudisha Wakati wa Kuokoa (trr) :
0ns
Sasa - Rejea kuvuja @ Vr :
2µA @ 1200V
Uwezo @ Vr, F :
69pF @ 1V, 1MHz
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
TO-252-3, DPak (2 Leads + Tab), SC-63
Kifurushi cha Kifaa cha Mtoaji :
TO-252
Joto la Kufanya kazi - Junction :
-55°C ~ 175°C