ON Semiconductor - FDC855N

KEY Part #: K6397402

FDC855N Bei (USD) [396898pcs Hisa]

  • 1 pcs$0.09366
  • 3,000 pcs$0.09319

Nambari ya Sehemu:
FDC855N
Mzalishaji:
ON Semiconductor
Maelezo ya kina:
MOSFET N-CH 30V 6.1A 6-SSOT.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Zener - Arrays, Viwango - Zener - Moja, Transistors - Ushirikiano uliopangwa, Transistors - FET, MOSFETs - RF, Transistors - IGBTs - Moja, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Viwango - Rectifiers - Arrays and Transistors - FET, MOSFETs - Arrays ...
Faida ya Ushindani:
We specialize in ON Semiconductor FDC855N electronic components. FDC855N can be shipped within 24 hours after order. If you have any demands for FDC855N, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDC855N Sifa za Bidhaa

Nambari ya Sehemu : FDC855N
Mzalishaji : ON Semiconductor
Maelezo : MOSFET N-CH 30V 6.1A 6-SSOT
Mfululizo : PowerTrench®
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 6.1A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 27 mOhm @ 6.1A, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 13nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 655pF @ 15V
Makala ya FET : -
Kuondoa Nguvu (Max) : 1.6W (Ta)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : SuperSOT™-6
Kifurushi / Kesi : SOT-23-6 Thin, TSOT-23-6