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Ikiwa eneo lako halijaorodheshwa, tafadhali chagua moja ya yafuatayo:

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  5. W947D2HBJX5E

Winbond Electronics - W947D2HBJX5E

KEY Part #: K942116

W947D2HBJX5E Bei (USD) [42953pcs Hisa]

  • 1 pcs$1.20813
  • 240 pcs$1.20212
Nambari ya Sehemu:
W947D2HBJX5E
Mzalishaji:
Winbond Electronics
Maelezo ya kina:
IC DRAM 128M PARALLEL 90VFBGA. DRAM 128M mDDR, x32, 200MHz
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Iliyoingizwa - Mfumo kwenye Chip (SoC), Linear - Usindikaji wa Video, Saa / Saa - Jenereta za Clock, PLL, Synthesizer za, PMIC - RMS kwa vibadilishaji vya DC, Upataji wa data - Analog kwa vibadilishaji vya Dij, Mantiki - Jenereta za Parity na Checkers, PMIC - Usajili wa Voltage - DC DC Kubadilisha Regu and Mantiki - Kumbukumbu za FIFO ...
Faida ya Ushindani:
We specialize in Winbond Electronics W947D2HBJX5E electronic components. W947D2HBJX5E can be shipped within 24 hours after order. If you have any demands for W947D2HBJX5E, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

W947D2HBJX5E Sifa za Bidhaa

Nambari ya Sehemu : W947D2HBJX5E
Mzalishaji : Winbond Electronics
Maelezo : IC DRAM 128M PARALLEL 90VFBGA
Mfululizo : -
Hali ya Sehemu : Active
Aina ya kumbukumbu : Volatile
Fomati ya kumbukumbu : DRAM
Teknolojia : SDRAM - Mobile LPDDR
Saizi ya kumbukumbu : 128Mb (4M x 32)
Usafirishaji wa Saa : 200MHz
Andika Wakati wa Msaada - Neno, Ukurasa : 15ns
Wakati wa Upataji : 5ns
Maingiliano ya kumbukumbu : Parallel
Voltage - Ugavi : 1.7V ~ 1.95V
Joto la Kufanya kazi : -25°C ~ 85°C (TC)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 90-TFBGA
Kifurushi cha Kifaa cha Mtoaji : 90-VFBGA (8x13)

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