ON Semiconductor - FQU2N100TU

KEY Part #: K6409471

FQU2N100TU Bei (USD) [75420pcs Hisa]

  • 1 pcs$0.51844
  • 5,040 pcs$0.17682

Nambari ya Sehemu:
FQU2N100TU
Mzalishaji:
ON Semiconductor
Maelezo ya kina:
MOSFET N-CH 1000V 1.6A IPAK.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - FET, MOSFETs - Moja, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Moduli za Dereva za Nguvu, Transistors - FET, MOSFETs - RF, Transistors - Bipolar (BJT) - Moja, Transistors - Ushirikiano uliopangwa, Viwango - Rectifiers - Moja and Transistors - Bipolar (BJT) - RF ...
Faida ya Ushindani:
We specialize in ON Semiconductor FQU2N100TU electronic components. FQU2N100TU can be shipped within 24 hours after order. If you have any demands for FQU2N100TU, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FQU2N100TU Sifa za Bidhaa

Nambari ya Sehemu : FQU2N100TU
Mzalishaji : ON Semiconductor
Maelezo : MOSFET N-CH 1000V 1.6A IPAK
Mfululizo : QFET®
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 1000V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 1.6A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 9 Ohm @ 800mA, 10V
Vgs (th) (Max) @ Id : 5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 15.5nC @ 10V
Vgs (Max) : ±30V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 520pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 2.5W (Ta), 50W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Through Hole
Kifurushi cha Kifaa cha Mtoaji : I-PAK
Kifurushi / Kesi : TO-251-3 Short Leads, IPak, TO-251AA