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Ikiwa eneo lako halijaorodheshwa, tafadhali chagua moja ya yafuatayo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Nyumbani
  2. Bidhaa
  3. Duru Jumuishi (ICs)
  4. Kumbukumbu
  5. AS4C4M16SA-6BANTR

Alliance Memory, Inc. - AS4C4M16SA-6BANTR

KEY Part #: K942301

AS4C4M16SA-6BANTR Bei (USD) [45468pcs Hisa]

  • 1 pcs$0.95615
  • 2,500 pcs$0.90163
Nambari ya Sehemu:
AS4C4M16SA-6BANTR
Mzalishaji:
Alliance Memory, Inc.
Maelezo ya kina:
IC DRAM 64M PARALLEL 54TFBGA. DRAM
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Saa / Saa - Jenereta za Clock, PLL, Synthesizer za, Chips za IC, Mantiki - Vipimo, Maingiliano - Maalum, Maelewano - Sensor, Kugusa uwezo, Maingiliano - Modemu - IC na Moduli, PMIC - RMS kwa vibadilishaji vya DC and Kumbukumbu - Batri ...
Faida ya Ushindani:
We specialize in Alliance Memory, Inc. AS4C4M16SA-6BANTR electronic components. AS4C4M16SA-6BANTR can be shipped within 24 hours after order. If you have any demands for AS4C4M16SA-6BANTR, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

AS4C4M16SA-6BANTR Sifa za Bidhaa

Nambari ya Sehemu : AS4C4M16SA-6BANTR
Mzalishaji : Alliance Memory, Inc.
Maelezo : IC DRAM 64M PARALLEL 54TFBGA
Mfululizo : Automotive, AEC-Q100
Hali ya Sehemu : Active
Aina ya kumbukumbu : Volatile
Fomati ya kumbukumbu : DRAM
Teknolojia : SDRAM
Saizi ya kumbukumbu : 64Mb (4M x 16)
Usafirishaji wa Saa : 166MHz
Andika Wakati wa Msaada - Neno, Ukurasa : 2ns
Wakati wa Upataji : 5.4ns
Maingiliano ya kumbukumbu : Parallel
Voltage - Ugavi : 3V ~ 3.6V
Joto la Kufanya kazi : -40°C ~ 105°C (TA)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 54-TFBGA
Kifurushi cha Kifaa cha Mtoaji : 54-TFBGA (8x8)

Habari mpya kabisa

Alliance Memory Low-Power DDR2 SDRAM
Alliance Memory Low Power CMOS SRAM
Alliance Memory MT41x DDR3 SDRAMs
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